Research Facilities

The Faculty of Science and Technology has created a world-class facility, the Lancaster Quantum Technology Centre (LQTC), which consists of

  • New class 100 and class 1000 clean rooms
  • State-of-the-art measurement equipment
  • Dedicated technical support

The LQTC establishes a significant new technology presence in the Northwest.

The Quantum Technology Centre contains state-of-the-art nanofabrication facilities, supported by molecular beam epitaxy reactors for atomic layer-by-layer growth of semiconductor nanostructures and devices. Fabrication techniques available include electron-beam lithography using a dedicated electron-beam writer, plasma processing and thin-film deposition. Electronic structures are measured at temperatures down to 10 mK and below by means of DC, microwave and pulse techniques. Photonic structures are characterized using a variety of specialist (0-17 Tesla) magneto-optics and (4-300 K) spectroscopy techniques, x-ray diffraction, electron microscopy and atomic force microscopy methods.

Nanofabrication Facilities

  • JEOL JBX-5500FS

    High-resolution electron beam lithography system with a beam diameter of 2nm. Using 50 KeV fine electron beam, line widths down to 10nm are achievable. The stage is positioned and controlled using laser interferometer which gives the line stitching accuracy of 40nm.

    • Electron emitter: TFE (ZrO/W)
    • Acceleration Voltage: 50 keV
    • Minimum beam diameter: 2 nm
    • Minimum line width: 10 nm
    • Beam current: 30 pA - 20 nA
    • Field size: 100 μm, 1000 μm
    • Beam scanning speed: 12 MHz

  • SUSS MicroTec MJB4 Mask Aligner

    An optical mask aligner using a mercury discharge lamp for exposing patterns in photoresist. Both front and back side alignment can be performed.

  • Oxford Instruments Plasma Pro NGP80 ICP

    Plasma deposition of thin films of SiO2 and Si3N4. The reactive gases used are SiH4, NH3, N2O and N2.

  • Oxford Instruments Plasmalab System 100

    This system uses chlorine base chemistry to etch mainly III-V semiconducting materials. It has both the RIE and ICP sources and a load lock is used to transfer samples. Etching of the multilayers materials can be monitored using a laser interferometer. Etchant gases are BF3, Cl2, CH4, H2, Ar, O2 and SF6.

  • Oxford Instruments Reactive Ion Etcher

    Used for dry etching of Si, SiO2 and Si3N4. Etchant gases are CHF3, CF4, O2 and Ar.

  • Moorfield Thermal Evaporator

    A four source thermal evaporator for the deposition of thin metallic films.

  • Moorfield Electron Beam Evaporator with Oxidation System

    The electron source incorporates a rotating carousel with six crucible positions for the deposition of thin metallic films. The deposition rate and film thickness are automatically controlled. The system incorporates a custom chamber for the controlled oxidation of deposited films.

  • Moorfield Sputtering System

    This system has a DC and an RF sputtering source. It is used for the thin film deposition of insulating materials and metals - including refractory metals that can be difficult to evaporate.

  • Allwin AccuThermo AW610 Rapid Thermal Annealer

    This annealer uses quartz lamps to rapidly heat samples following a computer controlled temperature profile. Annealing up to 800°C can be done in atmospheres of forming gas, N2, O2 or Ar.

  • Diener Electronics Plasma Asher

    This asher uses an O2 plasma to dry clean surfaces prior to film deposition and to remove photoresist residue.

  • TPT HB05 Ultra-sonic Wire Bonder

    An ultrasonic wire bonder to attach thin wire (typically 10 to 20 μm diameter) to bond pads on completed structures.

  • Quorum K850 critical point dryer

    A machine to remove liquid from delicate structures without damage. Used particularly for etching 3D nanostructures and preparing samples for microscopy.

  • PicoMaster 100 laser writer

    An instrument for maskless optical lithography with resolution as small as 300 nm.

  • Savannah S100 atomic layer deposition system

    This tool deposits high-quality dielectrics. In our standard configuration it can deposit Al2O3, HfO2 and SiO2.